Shunri Oda 小田俊理

发布日期:2019-12-10    浏览次数:

 

Shunri Oda 小田俊理

教授

办公电话:18401355796 Email: soda@pe.titech.ac.jp


个人简历

教育经历:

1974.04–1979.03 東京工業大学大学院総合理工学研究科 工学博士学位

1970.04-1974.03 東京工業大学理学部物理学科 理学士

工作经历:

2019.09 -今,买球推荐软件app排名,教授、

2017.04-2018.03,東京工業大学特任教授

1995.04-2017.03,東京工業大学量子ナノエレクトロニクス研究センター教授

1986.12-1995.04,東京工業大学工学部電子物理工学科 助教授

1982.08-1983.08 Massachusetts Institute of Technology客員研究員

1979.04-1986.11,東京工業大学工学部電子物理工学科 助手


研究

Nanoscale silicon devices

Quantum information devices

Single electron devices

Low-dimensional-structure devices


基金、励、荣誉和学

1. JST研究成果展開事業 Center of Innovation,,1,350,000,000JPY ,主持;

2013-2021

2. 日本学术振兴会科学研究費 (26249048) 41,860,000JPY,主持;

2014-2017

3. 日本学术振兴会科学研究費(22246040) 48,750,000JPY,主持;

2010-2012

4. 日本学术振兴会科学研究費 (19206035) 49,010,000JPY主持

2007-2010

5. 日本学术振兴会科学研究費 (16206030) 50,440,000JPY主持

2004-2007

6. 日本学术振兴会科学研究費 (14350160) 1,5100,000JPY主持

2002-2004

7. 日本学术振兴会科学研究費 (11450008) 14,800,000JPY主持

1999-2002

8. 日本学术振兴会科学研究費 (11355014) 36,130,000JPY主持

1999-2002

9. JST-SORST 225,000,000JPY主持;

2004-2009

10. JST-CREST 450,000,000JPY主持;

1999-2004

11. JST-SAKIGAKE 60,000,000JPY主持;


応用物理学会理事(2003.5-2005.3)

応用物理学会評議員(2005.3-2007.3)

The Electrochemical Society 日本支部長(2006.12-2009.3)

電気化学会電子材料委員会委員長(1994-2006)

JEITAナノエレクトロニクス技術専門委員会委員長(2007.4-2009.3)

科学研究費委員会専門委員(2000, 2003, 2004,2008-2010)

経済産業省産業構造審議会臨時委員(2001-2002)

科学技術・学術審議会専門委員(2003.3-2005.1)

NEDO技術委員(2004.10-2006.3)

JSTさきがけ研究領域アドバイザー(2007.6-2013.3)


主要

已发表论文271篇,出版专著章节35部。

近5年发表的部分代表性文章:

1. K. Fukumoto, A. Seyhan, K. Onda, S. Oda and S, Koshihara,Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface, Appl. Phys. Lett. 115, 053105 (5 pages), 2019

2. R. Mizokuchi, S. Oda and T. Kodera, Physically defined triple quantum dot systems in silicon on insulator,Applied Physics Letters, 114,073104 (4 pages), 2019

3. K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera and S. Tarucha,Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift,npj Quantum Information, 4, 54 (6 pages), 2018

4. Jian Liu, Huafeng Yang, Zhongyuan Ma, Kunji Chen, Xinxin Zhang, Hui Zhang, Yang Sun, Xinfan Huang and Shunri Oda,Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure, J. Physics D: Appl. Phys. 51, 025102 (7 pages), 2018

5. Jian Liu, Huafeng Yang, Zhongyuan Ma, Kunji Chen, Xinxin Zhang, Hui Zhang, Yang Sun, Xinfan Huang and Shunri Oda, An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET character, Nanotechnology, 29, 415205 (10 pages) 2018

6. J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, R. Delbecq,G. Allison, T. Honda, T. Kodera, S. Oda,Y. Hoshi, N. Usami, K. M. Itoh, S. Tarucha, A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%,Nature Nanotechnology, 13, 102-108, 2018

7. Yu Yamaoka, Kazuma Iwasaki, Shunri Oda and Tetsuo Kodera, Charge sensing and spin-related transport property of p-channel silicon quantum dots,Japanese Journal of Applied Physics,56,04CK07 (4 pages) 2017

8. Wanjing Du, Takamasa Kawanago and Shunri Oda, Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors,Japanese Journal of Applied Physics,56,04CP10 (5 pages) 2017

9. Takamasa Kawanago and Shunri Oda,Control of threshold voltage by gate metal electrode in molybdenum disulfide field effect transistors, Applied Physics Letters, 110,133507 (5 pages) 2017

10. J. O. Tenorio-Pearl, E. D. Herbschleb, S. Fleming, C. Creatore, S. Oda, W. I. Milne & A. W. Chin, Observation and coherent control of interface-induced electronic resonances in a field-effect transistor, Nature Materials, 16, 208-213, 2017

11. Shunri Oda and David K. Ferry,Nanoscale Silicon Devices,CRC Press,1-288,2016

12. D. Suzuki, S. Oda, Y. Kawano, A flexible and wearable terahertz scanner, Nature Photonics, 10, 809-813, 2016

13. K. Takeda, J. Kamioka, T. Otsuka, J. Yoneda, T. Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, and S. Tarucha,A fault-tolerant addressable spin qubit in a natural silicon quantum dot, Science Advances, 2, e1600694, 2016

14. Zhengyu Xu, Koichi Usami, Marolop Simanullang, Tomohiro Noguchi, Yukio Kawano and Shunri Oda, Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation,Japanese Journal of Applied Physics,55,085002 (3 pages), 2016

15. Marolop Simanullang, G. Bimananda M. Wisna, Koichi Usami, Wei Cao, Yukio Kawano, Kaustav Banerjee and Shunri Oda, Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors, Journal of Materials Chemistry C, 4, 5102 (7 pages), 2016

16. Takamasa Kawanago and Shunri Oda, Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors, Applied Physics Letters, 108, 041605 (5 pages), 2016

17. Tomohiro Noguchi, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Tetsuo Kodera, Shunri Oda, Synthesis of Ge/Si core/shell nanowires with suppression of branch formation, Applied Physics Express, 9, 055504 (3 pages), 2016

18. T. Sawada, T. Kodera and S. Oda, Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes, Applied Physics Letters, 109, 213102 (4 pages), 2016

19. Kosuke Horibe, Tetsuo Kodera, and Shunri Oda, Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate, Applied Physics Letters, 106, 083111, 2015

20. Kosuke Horibe, Tetsuo Kodera and Shunri OdaBack-action-induced Excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor, Applied Physics Letters, 106, 053119, 2015

21. Tomohiro Noguchi, Koudai Morita, Zhengyu Xu, Koichi Usami, Yukio Kawano, Tetsuo Kodera and Shunri Oda, Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness, Phys. Status Solidi A, 212, 1578 (4 pages), 2015